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Background
In late 2018, TSMC chairman
Mark Liu predicted chip scaling would continue to 3 nm and 2 nm nodes;
[1] however, as of 2019, other semiconductor specialists were undecided as to whether nodes beyond 3 nm could become viable.
[2]
TSMC began research on 2 nm in 2019.
[3] TSMC expected to transition from
FinFET to
GAAFET transistor types when moving from 3 nm to 2 nm.
[4]
Intel's 2019 roadmap scheduled potentially equivalent 3 nm and 2 nm nodes for 2025 and 2027 respectively.
[5] In December 2019, Intel announced plans for 1.4 nm production in 2029.
[5]
In August 2020, TSMC began building a R&D lab for 2 nm technology in Hsinchu, expected to become partially operational by 2021.
[6] In September 2020 (SEMICON Taiwan 2020) it was reported that TSMC Chairman Mark Liu had stated the company would build a plant for the 2 nm node at
Hsinchu in
Taiwan, and that it could also install production at
Taichung dependent on demand.
[7] According to the
Taiwan Economic Daily (2020) expectations were for high yield risk production in late 2023.
[8][9] In July 2021, TSMC received governmental approval to build its 2 nm plant; according to
Nikkei the company expects to install production equipment for 2 nm by 2023.
[10]
At the end of 2020, seventeen
European Union countries signed a joint declaration to develop their entire semiconductor industry, including developing process nodes as small as 2 nm, as well as designing and manufacturing custom processors, assigning up to 145 billion
euro in funds.
[11][12]
In May 2021,
IBM announced it had produced 2 nm class transistor using three silicon layer nanosheets with a gate length of 12 nm.
[13][14][15]
In July 2021, Intel unveiled its process node roadmap from 2021 onwards. The company confirmed their 2 nm process node called Intel 20A,
[notes 1] with the "A" referring to
angstrom, a unit equivalent to 0.1 nanometer.
[17] At the same time they introduced a new process node naming scheme that aligned their product names to similar designations from their main competitors.
[18] Intel's 20A node is projected to be their first to move from
FinFET to Gate-All-Round transistors (
GAAFET); Intel's version is named 'RibbonFET'.
[18] Their 2021 roadmap scheduled the Intel 20A node for introduction in 2024.
[18]
Beyond 2 nm
Intel have planned 18A (equivalent to 1.8 nm) products for 2025.
[17]
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